Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator
نویسندگان
چکیده
منابع مشابه
(Sn,Al)Ox Films Grown by Atomic Layer Deposition
Tin oxide (SnO2) is a transparent semiconductor with a wide band gap and electrical resistivity as low as 2 10 4 Ω 3 cm and high infrared reflectivity, over 90%. 4 These properties are achieved using n-type doping by substituting fluorine for about 1% of the oxygen. The low electrical resistance and optical transparency in SnO2 are widely used in applications such as solar cells, displays, touc...
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2016
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2016.08.046